Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.
نویسندگان
چکیده
We present the device parameters for organic field-effect transistors fabricated from solution-deposited films of functionalized pentacene and anthradithiophenes. These materials are easily prepared in one or two steps from commercially available starting materials and are purified by simple recrystallization. For a solution-deposited film of functionalized pentacene, hole mobility of 0.17 cm2/V.s was measured. The functionalized anthradithiophenes showed behavior strongly dependent on the substituents, with hole mobilities as high as 1.0 cm2/V.s.
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ورودعنوان ژورنال:
- Journal of the American Chemical Society
دوره 127 14 شماره
صفحات -
تاریخ انتشار 2005